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| 2sc2060 transistor (npn) feature power dissipation p cm : 0.75 w (tamb=25 ) collector current i cm : 1 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= 100a , i e =0 40 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 32 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 5 v collector cut-off current i cbo v cb =40v , i e =0 0.5 a emitter cut-off current i ebo v eb =4v , i c =0 0.1 a dc current gain h fe(1) v ce =3v, i c = 100ma 80 400 collector-emitter saturation voltage v ce(sat) i c = 500m a, i b = 50ma 0.4 v to-92mod 1. emitter 2. collector 3. base 123 2sc2060 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd free datasheet http://
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